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PJ04N03D
25V N-Channel Enhancement Mode Field Effect Transistor
FEATURES
* RDS(ON),VGS@10V,I DS@30A=4m * RDS(ON),VGS@5.0V,I DS@24A=6m * Advanced trench process technology * High Density Cell Design For Uitra Low On-Resistance * Specially Designed for DC/DC Converters and Motor Drivers * Fully Characterized Avalanche Voltage and Current * In compliance with EU RoHS 2002/95/EC directives G S D TO-252
MECHANICALDATA
* Case : TO-252 Molded Plastic * Terminals : Solderable per MIL-STD-750,Method 2026 * Marking : 04N03D G D
S
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER Drain-Source Voltage Gate-Source Voltage Continous Drain Current Pulsed Drain Current (1) Avalanche Energy L=0.1mH,I D=53A,VDD=25V Power Dissipation TC=25oC TC=75oC TC=25oC
Symbol VDS VGS ID I DM EAS PD TJ,TSTG RJC RJA
Limits 25 +20 80 220 140 100 66 -55 to +175 1.5
Units
V V A A mJ
W
Operating Junction and Stroage Temperature Range Junction-to-Case Junction-to-Ambient NOTE : Pulse width limited by maximum junction temperature
o
C
o
C/W
50
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
December 10,2009-REV.00
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PJ04N03D
ELECTRICAL CHARACTERISTICS (TA=25oC,Unless Otherwise Noted)
PA RA ME TE R S YM B O L T E S T C O N D IT IO N S M IN . T YP. MA X . U N IT
S TA T IC
D ra i n-S o urc e B re a k d o wn Vo lta g e Ga te Thre s ho ld Vo lta g e D r a i n - S o u r c e O n- s t a t e Re s i s t a nc e Ga te -B o dy L e ak a ge Ze r o Ga te Vo lta g e D ra i n C urre nt O n - S t a t e D r a i n C ur r e nt F o r w a r d Tr a ns c o n d uc t a nc e I V (B R)D S S V GS (TH)
V GS= 0 V, I V D S = V GS, I
D=2 50A D=250A D=3 0A D=2 4 A
25 1 65 15
3 .6 4 .8 -
3 4 .0 6 .0 +100 1 25 -
V V m m nA A A A S
V GS = 1 0 V, I
R D S (ON)
V GS= 5 V, I
I
GS S
V D S= 0 V, V GS = + 2 0 V V D S = 2 0 V , V GS = 0 V
I
DSS
V D S= 2 0 V, V GS = 0 V, TJ= 1 2 5 oC
D (ON)
V D S= 1 0 V, V GS = 1 0 V V DS= 5 V,I
D=2 4 A
g fs
D YN A M IC
V DS =1 5 V ,V GS =5 V,I To t a l G a t e C h a r g e QG
D=3 0A
-
2 6 .4 5 8 .2 5 .4 11 . 6 1 7 .6 11 . 8 4 8 .6 1 9 .2 2950 520 430 1 .2
22 18 72 26 -
nC nC nC nC nS nS nS nS pF pF pF
G a t e - S o ur c e C h a r g e Ga te -D ra i n C ha rg e Tur n- O n D e l a y Ti m e R i s e Ti m e Tur n- O f f D e l a y Ti m e F a l l Ti m e In p ut C a p a c i t a nc e O u t p ut C a p a c i t a nc e R e ve r s e Tr a ns f e r C a p a c i t a n c e Ga te Re s i s t a nc e
Q GS QGD t d (o n) tr td(off) tf C IS S C OSS C RSS Rg
V D S = 1 5 V , V GS = 1 0 V I D=30A
-
V D S= 1 5 V , I D = 1 A , V GS = 1 0 V R GS= 3 . 6
-
V GS= 0 V, V D S = 1 5 V f=1 MHz
-
V GS = 1 5 m V , V D S = 0 V , f = 1 M H z
-
S o urc e -D ra i n D i o d e
C o nt i n uo u s C ur r e n t F o rwa rd Vo lta g e I
S
I
F = 3 0 A , V GS = 0 V
-
80 1.3
A V
V SD
-
NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%.
Switching Test Circuit
VIN
VDD
Gate Charge Test Circuit
VGS VOUT
VDD
RL
RL
RG
1mA
RG
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PJ04N03D
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
100 ID - Drain-to-Source Current (A) 80 60 40 20 2.5V 0 0 2 3 4 VDS - Drain-to-Source Voltage (V) 1 5
80
ID - Drain Source Current (A)
4.0V VGS= 4.5V, 5.0V, 6.0V, 10.0V 3.5V 3.0V
VDS =10V
60
40 TJ = 125oC 20
25oC
- 55oC
0 1 1.5 2 2.5 3 3.5 4 VGS - Gate-to-Source Voltage (V) 4.5
Fig.1 Output Characteristric
Fig.2 Transfer Characteristric
RDS(ON) - On-Resistance (m )
RDS(ON) - On-Resistance (m )
12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 ID - Drain Current (A) 80 90
VGS = 10V
20
ID =30A
16 12 8 4 TJ =25oC 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10
VGS = 5.0V
125oC
Fig.3 On Resistance vs Drain Current
Fig.4 On Resistance vs Gate to Source Voltage
RDS(ON) - On-Resistance (Normalized)
1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC)
4000
C - Capacitance (pF)
VGS =10 V ID =30A
3500 3000 2500 2000 1500 1000 500 0
Ciss
f = 1MHz VGS = 0V
Coss Crss
0
VDS - Drain-to-Source Voltage (V)
5
10
15
20
25
Fig.5 On Resistance vs Junction Temperature
December 10,2009-REV.00
Fig.6 Capacitance
PAGE. 3
PJ04N03D
Typical Characteristics Curves ( Ta=25, unless otherwise noted)
VGS - Gate-to-Source Voltage (V)
10 8 6 4 2 0 0 10 20 30 40 Qg - Gate Charge (nC) 50 60
100 IS - Source Current (A)
VDS =15 V ID =30A
VGS = 0V
10
TJ = 125oC 25oC
1
-55oC
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Fig. 7 Gate Charge Waveform
1.3
Fig.8 Source-Drain Diode Forward Voltage
1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC)
BVDSS - Breakdown Voltage(Normalized)
Vth - G-S Threshold Voltage (Normalized)
ID = 250A
ID =250A
1.2 1.1 1
0.9 0.8 -50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature
Fig.10 Threshold Voltage vs Junction Temperature
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PJ04N03D
MOUNTING PAD LAYOUT
ORDER INFORMATION
* Packing information T/R - 3K per 13" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
December 10,2009-REV.00
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